| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
특별심포지엄1. 전도성 산화물 소재 연구동향 및 신규 응용연구-오거나이저:조형균(성균관대) |
| 제목 |
High mobility and high stability of amorphous oxide thin film transistor for display applications |
| 초록 |
High-performance thin-film transistors (TFTs) were fabricated with amorphous oxide SiZnSnO semiconductors. Amorphous SiZnSnO TFT was confirmed to have high stability as well as high mobility. This could be achieved by suppressing the oxygen vacancies by high binding energy with the oxygen of Si atoms. Furthermore, we analyzed the electrical characteristics and stability with various parameters using the capping structure. It was confirmed that the electrical characteristics varied depending on the work function and resistance of the capping layer. This can be explained by two mechanisms: i) the injection or depletion of electrons by the capping layer. ii) current path is formed in the ω-shape by the intermediate capping layer. In addition, a systematic change in capping length provides better characteristics by decreasing the influence of the interface between gate dielectric and active channel layer, as well as more electron injection. It can be directly applied to next-generation display applications. |
| 저자 |
Sang Yeol Lee |
| 소속 |
Department of Semiconductor Engineering |
| 키워드 |
amorphous oxide; oxide semiconductor; thin film transistor; high mobility; high stability
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| E-Mail |
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