| 초록 |
Many techniques have been reported for the formation of short-channel organic thin film transistor (TFT) showing high switching speed, but those in general require special equipment and complicated process. In this study, atomic force microscopy (AFM) lithography, which is a one of simple method for the formation of a few micrometer channel length, and lamination technique were used for the formation of TFT with a few micro-meters long channel length in this study. The detailed fabrication process is discussed, and the electrical characteristics of the short channel TFT is investigated and discussed in detail in terms of switching speed. |
