| 초록 |
Conventional Si-based CMOS image sensor has fundamental limitations of 1) low absorption coefficient, 2) panchromatic absorption and 3) long light travel distance. Interestingly, organic semiconductor-based CMOS image sensor has a great potential to overcome all those drawbacks of Si CMOS so that the pixel size of image sensor can be further decreased. Nonetheless, there has been no report of addressing all these issues based on organic semiconductors. Especially, to achieve 2) and 3), organic photodiode should possess a wavelength selectivity so that full color imaging is possible without the use of color-filter. Here we suggest the use of nonabsorbing acceptor layer for constructing color-selective organic photodiode. In this case, the wavelength-selectivity of polymer donor can be fully reflected in the final quantum efficiency or detectivity spectrum of photodiode, which means the realization of color-filter free image sensor. |
