| 초록 |
Graphene and 2-dimensional (2D) semiconductors have been attracting many intentions for a post-Si materials. While transistors of 2D semiconductors can be switched-off, graphene field-emission transistor (GFET) has suffered from switching off. To solve the switching problem, new device structures have been proposed: graphene barristor [1] and graphene tunneling transistor [2]. Both structures have hetero structure between graphene and semiconductor or insulator. In this talk, the difference between transistor and barristor and the summary of graphene barristor will be presented. |
