| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | MBE growth of III-V based materials and its applications to 2D/1D/0D structures and development of low-power consumption III-V on Si devices for Post-Si Era |
| 초록 | In KIST, 5 (+3) MBE systems are installed for the study of low dimensional structures. With the MBEs, we are in the middle of studying; As/P/Sb-based materials with new properties, High speed 3-5 2DEGs/2DHG for physics (mesoscopic physics, Topo. Insul. etc), high speed, and low power consumption electronics, Digital-alloyed 2D structures for QCL, QWIP, LD, PDs, Catalyst free/Au-assisted GaAs/InAs/InP/InSb nano-rod 1D structures for SPS or Nano TR etc., Various kind of semi-conductor QDs grown by SK, MEE, and Droplet methods. With these MBE systems, the researcher in KIST published more than 200 SCI articles include Nature (2013) and Science (2009). Scientists have pioneered the first stages of Si electronics, and now a new frontier in semiconductor electronics is arising. We will introduce contemporary issues associated with breaking new ground in the post-Si-era for semiconductors and discuss the research activities in the recently launched Post-Silicon Semiconductor Institute at KIST. In this presentation, I will show MBE systems & activities with them in KIST and discuss probable co-works. |
| 저자 | 송진동 |
| 소속 | 한국과학기술(연) |
| 키워드 | 3-5 CMOS; MBE; Compound Semiconductor; Nano |
