| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 가을 (10/10 ~ 10/12, 경주컨벤션센터) |
| 권호 |
43권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Nonvolatile Resistive Random Access Memory based on Polyimide/Graphene Oxide Nanocomposite |
| 초록 |
Recently, resistive random access memory (RRAM) has been studied as a next generation nonvolatile memory, because it has simple metal-insulator-metal structure and excellent operating characteristics. In this work, a graphene oxide-based polyimide (PI-GO) nanocomposite was prepared and later used as memory layer (composed of a GO and a PI derived from rel-(1'R,3S,5'S)-spiro[furan-3(2H),6'- [3]oxabicyclo[3.2.1]octane]-2,2',4',5(4H)-tetrone (DAn) and 2,6-diaminoanthracene (AnDA)) in the fabrication of a RRAM device. The device showed write-once-read-many-times (WORM) characteristic with a high ON/OFF current ratio of 3.41 x 108. This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle and retention time during 1500 s. These results suggested that PI-GO as an active layer in RRAM is an attractive candidate for applications in next generation nonvolatile memory. |
| 저자 |
최주영, 유환철, 이정준, 전지현, 임재혁, 장준환, 진승원, 조수행, 정찬문
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| 소속 |
연세대 |
| 키워드 |
polyimide; Graphene Oxide; RRAM; memory
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| E-Mail |
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