| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Fabrication of polycrystalline Si films by rapid thermal annealing of amorphous Si film using a poly-Si seed layer grown by vapor-induced crystallization |
| 초록 |
We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at 550℃ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at 680℃ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to 50℃, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to 3x1017 cm-3 and that at the poly-Si/SiO2 interface was lowered to 5x1019 cm-3. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED. |
| 저자 |
양용호, 안경민, 강승모, 안병태
|
| 소속 |
KAIST |
| 키워드 |
rapid thermal annealing; vapor-induced crystallization; polycrystalline Si
|
| E-Mail |
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