| 초록 |
Removal of dissolved oxygen(DO) from water is one of the primary concerns in various industries such as semiconductor manufacture, power plants, pharmaceuticals and biotechnology. Among all these, the standard for the DO level in the ultrapure water used in the semiconductor industry is the most urgent. Currently, ultrapure water is often used as a cleaning agent for silicon wafer. The native oxide formed on the wafer surface during the cleaning step interferes with the growth of epitaxial silicon thin film. The nagative oxide affects the control of film quality of thin gate oxides. The presence of the dissolved oxygen in the ultrapure water causes formation of a native oxide layer on the wafer surface when it is rinsed with the ultrapure water. The native oxide growth is dependent on both the exposure time of the silicon surface to ultrapure water and the DO level in ultrapure water. In this study, we have prepared membrane contactors using catalyst-dopped asymmetric membranes and studied DO removal from water. The morphology of the catalyst-dopped membrane was investigated by SEM. The DO removal efficiency of the membrane contactors has been studied. |
