| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | 4. 고효율, 고기능성 차세대 태양전지 기술개발 동향 (Symposium on next generation solar cells with high efficiency and hig |
| 제목 | Passivating Contact Structure for High Efficiency N-type Front Junction Silion Solar Cells |
| 초록 | Industrial crystalline silicon(c-Si) solar cells with using a screen printing technology share the global market over 80% and they will continue to be the same for at least the next decade. Recently, industrial c-Si solar cells have been developed to realize high efficiency, and consequently interested in n-type wafer based Si cell technology, and various cell structures (*PERL,**HIT). Here, a novel passivation technology reducing the recombination of generated carriers is important to improve solar cell performance. Especially, tunnel oxide passivated contact (TOPCon) solar cells have been observed to reduce the recombination generated in silicon/back surface field (BSF) layer/metal by inserting ultra-thin SiOx layer between silicon and BSF. In this study, passivated contact technologies that can improve the efficiency(>22%) of n-type front junction silicon solar cells are summarized. The relations between the poly-Si layer (BSF) and tunnel oxide passivation layer (SiOx) are examined, and also passivation quality control using hydrogenation is discussed. *PERL : Passivated Emitter and Rear Locally diffused cell **HIT : Heterojunction with Intrinsic Thin layer cell |
| 저자 | 이해석, 김동환, 강윤묵, 배수현, 박세진 |
| 소속 | 고려대 |
| 키워드 | solar cell; passivated contact; tunnel oxide |
