| 초록 |
We present an organic ambipolar phototransistor fabricated on top of a polymeric gate dielectric based on PTCDI-C5 as an n-type crystal template that forms directly from solution due to the strong self-assembling property, and C8-BTBT, a p-type channel material with low self-assembling characteristics. We show that the n-type crystal template aids the unidirectional formation of the p-type crystal, and we verify the device structure using different methodologies. We present an optimization process and manage to achieve balanced charge transport and high photosensitivity. We perform a statistical analysis of the optimized device characteristics. We also present the ease of fabrication of complimentary inverters with high gain using these ambipolar devices. |
