| 초록 |
Recently, the carbon nitride networks have been explored for applications such as organic semiconductor, precursors for superhard phases, and materials with oxidation resistance and chemical inertness. 2-D and 3-D structures with CxNy composition have been reported by using the special synthetic methods such as physical deposition method (PVD), chemical deposition method (CVD), ion-beam assisted deposition (IVD), ionic implantation, laser ablation, plasma CVD, and chemical synthetic methods. In theses earlier studies high preparation temperature is inept to prepare carbon nitride because of easy decomposition of nitrogen to form more stable. Amongst much preparation methods, chemical synthetic methods are characterized with the relatively low temperature (150 ~ 300 oC), but those methods demand high pressure (140 MPa ~ 1.5 Gpa) and long preparation time to obtain 2-D carbon-nitrogen(C-N) structure. In this presentation, we aimed at showing a facile preparation method for the synthesis of carbon nitride networks under mild conditions without special reactor, such as autoclave. Two different 2-D stacking structures of carbon nitride layers could be obtained by simply changing mole ratios of the reactants at mild conditions, such as atmospheric pressure and below 150 oC. Physicochemical structure of synthesized graphitic carbon nitride was characterized by SAXS, XRD, FTIR, XPS and elemental analysis. |
