| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 | The preparation of IGZO sputter target with less-indium composition and the characteristics of IGZO thin film |
| 초록 | In2O3:SnO2(ITO) is well known transparent conducting oxide(TCO) material for excellent electrical conductivity and optical transmittance. Although ITO is widely used as transparent electrode for full color display and high efficiency solar cell, ITO has several problems for long-term usage, such as exhaustion of Indium source and harmfulness manufacturing processes. Therefore, many studies for alternative material of ITO are intensively carried. The amorphous In2O3:Ga2O3:ZnO (IGZO) is one of the most likely candidate for substitute material of ITO, which has wide band gap and high electron mobility. In this research, synthesis method of IGZO sputtering target was studied and physical properties of IGZO thin films are evaluated. Synthesized target of IGZO shows different physical properties depend on molar ratio of Ga2O3, In2O3 and ZnO and optimum mixing ratio was 1: 1: 6 mol% of Ga2O3, In2O3 and ZnO, respectively. When the sintering temperature is higher then 1673K, the mixture of Ga2O3, In2O3 and ZnO is sintered by single phase composition, InGaZn3O6 which implied that optimal sintering temperature is over 1673 K. The sputtered IGZO film shows 101.6Ω/sq of surface resistivity and 2.2*102 cm2/V2s of carrier mobility. Moreover, IGZO film exhibits excellent optical property of 85% penetration ratio which suggests that IGZO film has the potential to become an optoelectronic material. |
| 저자 | 김흥수1, 이영주1, 박종일1, 박순홍1, 김주영1, 오윤석1, 김태희2 |
| 소속 | 1포항산업과학(연), 2안동대 |
| 키워드 | IGZO; TCO; amorphous; sputter; target |
