| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | The impact of hydrogen peroxide and stirring temperature of solutino processed LaZrOx gate dielectric on low voltage operated IGO thin film transistors. |
| 초록 | High-k gate dielectrics are now being intensively investigated as an alternative candidate for conventional gate dielectrics such as SiO2 and SiNx, in order to lower the power consumption of the devices. Particulartly, low temperature is demanded for high-k gate dielectrics in thin film transistors to applied its applications in flexible electroncs. However, because the solution-processed high-k gate dielectrics require a high thermal energy to form uniform and condensed film, the additional solution synthesis and annealing process are needed for low-temperature solution process. Because the conventional solution-processed high-k gate dielectrics have high residual organic concentration at low annealing temperature, we propose the novel solution process that includes the hydrogen peroxide additive and the high stirring temperature as an oxidizing agent and a decomposition of residual organic, respectively. In this study, we investivated the gate dielectric properties according to hydrogen peroxide additive and various stirring temperature and deep UV photochemical activation process was adopted to achieve thin films. In addition, we demonstrated low-voltage operation indium-gallium-oxide(IGO) thin film transistors at low temperature(180℃) |
| 저자 | 이수언, 이시형, 정재경 |
| 소속 | 한양대 |
| 키워드 | solution-process; low temperature; high-k gate dielectric |
