| 학회 |
한국재료학회 |
| 학술대회 |
2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 |
11권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
4인치 실리콘 기판위에서 다공성 알루미나 막의 제조 |
| 초록 |
The porous anodic alumina(PAA) films were fabricated by the anodization of an aluminum film which had been evaporated on the large-scaled (4-in.) Si substrate. A thin Ti layer was inserted between an Al film and a Si wafer as adhesion and conducting layers. Thick (~µm) aluminum film with a good surface flatness was found to critically necessary for obtaining the highly ordered nanopore arrays. The effect of substrate doping was also investigated to compare the differences of the anodic behavior between the p-type and n-type doped wafers. |
| 저자 |
지상원, 정양규, 이정호
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| 소속 |
한양대 |
| 키워드 |
porous anodic aluminum(PAA); highly ordered nanopore arrays; effect of substrate doping
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| E-Mail |
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