| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Phase-Filed model for grain growth of polysilicon thin film and observation of the effect of sheet resistance by grain boundaries |
| 초록 | The microstructure of most materials consists of multiple grains with different crystallographic orientations. The local energy at the grain boundaries, or interfaces, is higher than the corresponding bulk energies of the grains forming the grain boundaries. This extra energy associated with the grain boundaries provides a thermodynamic driving force to move the grain boundary in a manner as to minimize the total free energy. Such motion of grain boundaries in polycrystalline materials results in grain growth which is a process of growth of some grains and shrinking of some others. In this regard, computer research is very efficient and useful for observing the microstructure of materials. In this study, grain growth in poly-Si thin films is observed using the phase-field method (PFM) and the effect of grain boundaries on sheet resistance is discussed through computer simulation. |
| 저자 | 이환욱, 권용우 |
| 소속 | 홍익대 |
| 키워드 | polysilicon; phase-field method; grain growth; sheet resistance |
