| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Etching Characteristics by using Pulse-Time-Modulation in 60 MHz/2 MHz Dual-Frequency Capacitive Coupled Plasma |
| 초록 | In dry etching of nano-scale contact holes, capacitively coupled plasma (CCP) with parallel-plate electrodes are widely being used. For the next generation nano-sized devices, highly selective etching of contact holes with a high aspect ratio will be required. To content these requirements, etching systems and processes using high density fluorocarbon plasmas need to be developed. However, high density plasmas have some problems like low selectivity caused by surplus dissociation of fluorocarbon etchant gases. Also, for the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we studied on the etching of SiO2 by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above. |
| 저자 | 이철희, 염근영 |
| 소속 | 성균관대 |
| 키워드 | capacitively coupled plasma (CCP); Pulse; X-ray photoelectron spectroscopic |
