| 학회 |
한국재료학회 |
| 학술대회 |
2003년 가을 (11/21 ~ 11/22, 연세대학교) |
| 권호 |
9권 2호 |
| 발표분야 |
반도체 |
| 제목 |
MgO/GaN MOSFETs의 dc 특성 및 Gate Breakdown 특성 Simulation |
| 초록 |
The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is ＜10-3 A•µm-1 for 0.5 µm gate length devices with oxide thickness ＞600 Å or for all 1 µm gate length MOSFETs with oxide thickness in the range of ＞200 Å. Gate breakdown voltage is ＞100 V for gate length ＞0.5 µm and MgO thickness ＞600 Å. The threshold voltage scales linearly with oxide thickness and is ＜2 V for oxide thickness ＜800 Å and gate lengths ＜0.6 µm. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications. |
| 저자 |
조 현1, 김진곤1, B.P. Gila2, K.P. Lee3, C.R. Abernathy2, S.J. Pearton3, F. Ren2
|
| 소속 |
1밀양대, 2Department of Materials Science and Engineering, 3Univ. of Florida |
| 키워드 |
MgO/GaN MOSFET; dc performance; Gate breakdown characteristics; simulation; a drift-diffusion model
|
| E-Mail |
|
