| 초록 |
Doping of organic semiconductor (OS) is an important technology for the efficient organic devices such as OLEDs, OTFT and OPV. However, in the demand of organic devices under hard operating conditions such as high temperature and strong ultra-violet light, instability of organic devices having doped OS, has been issued due to dopant diffusion and degradation. In this paper, we have studied the dopant diffusion and deformation of organic molecules by impedance spectroscopy during annealing of devices having intrinsic and doped organic layers. This result clearly shows that electrical properties of devices were degraded due to the crystallization of intrinsic organic molecules by glass transition rather than the dopant diffusion. |
