| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
분자전자용 소재 및 소자 |
| 제목 |
Charge generation efficiencies of organic p-dopants in an organic semiconductor |
| 초록 |
We report that an organic p-dopant tri[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] [Mo(tfd)3] resulted in higher density of holes than inorganic metal oxide dopants of rhenium oxide (ReO3) or molybdenum oxide (MoO3) in 1,4-bis[N-(1-naphthyl)-N’-phenylamino]-4,4’-diamine (NPB) even though the metal oxide dopants possess deeper work functions compared to Mo(tfd)3. Higher charge generation efficiency results largely from the homogeneous dispersion of Mo(tfd)3 in the host. In contradistinction, the transmission electron microscopy (TEM) analysis revealed a formation of metal oxide nanoclusters. This highlights the importance of homogeneous dispersion for an efficient doping. |
| 저자 |
이재현1, 김현미1, 김기범1, Ryota Kabe2, Pavel Anzenbacher Jr2, 김장주1
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| 소속 |
1서울대, 2Bowling Green State Univ. |
| 키워드 |
organic semiconductor; p-doping; charge generation efficiency; dispersion efficiency
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| E-Mail |
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