| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Study on the Surface Potential Defects Behavior of P-type silicon wafer |
| 초록 | We attempted to detect defects in device kills on p-type silicon wafers using diluted SC-1 cleaning, laser particle counter (LLS) and gate oxide integrity (GOI). In particular, the GOI fail rate and LLS map were compared and evaluated after diluted SC-1 cleaning process, focusing on the etch rate change of silicon surface with SC1 composition, temperature and etching time. The etch rate of the p-type silicon wafers measured increased as the H2O2 ratio decreased and the etch rate of SC1 increased as the amount of H2O increased. We have been able to detect potential surface defects by improving the SC1 composition of p-type silicon. Finally, it was confirmed that these potential surface defects occurred in the SC1 cleaning due to the influx of contaminants prior to the cleaning process of the wafer manufacturing process. It was confirmed that the mixing ratio of NH4OH and H2O2 in the SC1 condition was minimized by mixing 3 or more H2O2 with NH4OH. |
| 저자 | 신정원, 함호찬 |
| 소속 | SK siltron |
| 키워드 | Silicon wafer; GOI; SC1 |
