| 초록 |
The electrical performance of triethylsilyethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectric surface polarity controlled via grafting hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene to SiO₂ dielectrics. On the untreated and treated SiO₂ dielectrics, solvent-vapor annealed TES-ADT films contained millimeter-sized crystals. The operation and bias stability of OFETs containing similar crystalline structures of TES-ADT could be significantly enhanced with a decrease in dielectric surface polarity. Among dielectrics with similar capacitances and surface roughnesses, the TES-ADT/PS-grafted dielectric interface contained the fewest trap sites, producing low voltage operation and high performance OFET with a charge-carrier mobility of ~1.32 cm²/Vs, on-off current ratio of ＞ 10^6, and threshold voltage of ~ 0 V, as well as long-term operation stability under negative bias stability. |
