| 학회 |
한국공업화학회 |
| 학술대회 |
2014년 봄 (04/30 ~ 05/02, 제주국제컨벤션센터) |
| 권호 |
18권 1호 |
| 발표분야 |
포스터-고분자 |
| 제목 |
Enhanced Bias Stability of Organic Field-Effect Transistor Containing Solution-Processed Triethylsilylethynylanthradithiophene |
| 초록 |
The electrical performance of triethylsilyethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectricsurface properties, which could be controlled by grafting organic molecule ssuch as hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene to 300-nm-thick SiO2 dielectrics. Solvent-vapor annealing spun-cast TES-ADT films enabled millimeter-sized grown crystals with less grain boundaries (GBs) on all dielectrics, minimizingthe interfacial charge trapping sites located at the GBs. The bias stability of the resulting TES-ADT OFETs were found to be significantly improved with a decrease in dielectric surface polarity. The non-polar PS grafted SiO2 dielectrics yielded the highest charge-carrier mobility of TES-ADT films in OFETs of up to 1.25 cm2/Vs,as well as long-term operation and negative bias stability. |
| 저자 |
김지예, 김유진, 박찬언
|
| 소속 |
POSTECH |
| 키워드 |
Organic Field-Effect Transistors; Bias Stabilitiy; Triethylsilyethynyl anthradithiophene
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| E-Mail |
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