| 초록 |
Resistive factors in conductive materials play a pivotal role in semiconductor-based energy conversion technologies. However, because many transducer-related studies have only addressed the resistance of semiconductor briefly, a fundamental understanding of specific causes of energy conversion still remains a challenge. Here, to identify inherent conduction mechanisms of amorphous oxide semiconductor (AOS) from a sophisticated perspective, we suggest an ion-dynamics-driven (ionovoltaic) transducer using sputter-deposited amorphous ITO films with tunable resistive factors. The generated electricity from ionovoltaic transducers serves a critical clue to identify the activated conduction mechanism of AOS in a simple way. This novel analytical approach will provide a fresh insight to ascertain a resistance-dependent behavior of electrons in semiconductors, making a great contribution to the core technology of energy conversion. |
