| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | The reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen |
| 초록 | The degradation of amorphous oxide semiconductor (AOS)-based thin film transistors (TFTs) under negative bias illumination stress (NBIS) is a major issue that has been addressed frequently over the past several years. It is generally reported that exposure to light results in the creation of photo-induced electron-hole pairs in AOSs, which may induce the ionization of oxygen vacancies (VO + 2h+ + 2e- → VO2+ + 2e-). The defects act as metastable electron donors, which do not recombine readily with the released free carriers. Consequently, electrical conduction takes place even after the light is turned off, which is a phenomenon reported as persistent photoconduction (PPC). It has an effect of shifting the threshold voltage (Vth) of the devices towards negative values, which is further accelerated when a negative gate bias is applied. The present work consists of a study on the incorporation of nitrogen during the sputter growth of Ge-Ga-In-O (GGIO) semiconductors, and their effect on the PPC properties of the associated TFT devices. |
| 저자 | 이현모, 옥경철, 정현준, 박진성 |
| 소속 | 한양대 |
| 키워드 | <P>Thin Film Transistors (TFTs); Persistent Photoconduction (PPC); Negative Bias Illumination Stress (NBIS)</P> |
