| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 |
Electrical and optical properties of p-type amorphous oxide semiconductor Mg:ZnCo2O4 thin-film |
| 초록 |
Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:ZnCo2O4 thin films deposited at room temperature using RF sputtering, which exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:ZnCo2O4 ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:ZnCo2O4 thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:ZnCo2O4 thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~75%, and hole mobility of 1.1~3.7 cm2/Vs, were obtained. |
| 저자 |
이칠형1, 최원국1, 이전국1, 최두진2, 오영제1
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| 소속 |
1한국과학기술(연), 2연세대 |
| 키워드 |
Spinel oxide; Mg:ZnCo2O4; Electrical property; P-type amorphous oxide semiconductor
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| E-Mail |
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