| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Fluorine doped ZnON Thin-Film Transistors with high field effect mobility fabricated by reacitve co-sputtering |
| 초록 | During the last few years, ZnON TFTs have been researched as a promising candidate for the high resolution and large area displays due to its high field effect mobility among various oxide semiconductors. However, ZnON TFTs are limited by its unstable electrical characteristic. Compared to the ZnON TFTs, fluorine doped ZnON (ZnON:F) TFTs are available for threshold voltage control and sub-threshold swing with fluorine doping ratio adjustment. Previous researches reported that fluorine with higher electronegativity and similar radius to the oxygen and nitrogen was able to passivate the relative oxygen or nitrogen vacancies in oxide semiconductors. In our study, ZnON:F TFTs was fabricated. Heavily doped p-type Si wafer substrate with thermally grown SiO2 (100nm) layer is used as gate/gate insulator. ZnON:F (30nm) was deposited in a mixed reactive gas using the Zn metal target and ZnF2 target by means of reactive co-sputtering. Then, 100nm aluminum (Al) is deposited as source/drain electrode by thermal evaporation. The post-annealing temperature was carried out at 175oC+@. It was found the amount of fluorine doping concentration increases when RF power increases. As a result, the optimized ZnON:F TFTs showed 50.2cm2/Vs of field effect mobility, 2.18V of threshold voltage, 0.31V/decade of sub-threshold swing. The fluorine anion may play a role to suppress oxygen or nitrogen vacancies in ZnON semiconductors. The device performance and analysis will be discussed in the presentation. |
| 저자 | 조현수, 이현모, 옥경철, 박진성 |
| 소속 | 한양대 |
| 키워드 | <P>Reactive co-sputtering; fluorine doped ZnON TFTs; high field effect mobility; ZnON TFTs</P> |
