| 학회 |
한국재료학회 |
| 학술대회 |
2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 |
12권 2호 |
| 발표분야 |
나노 및 생체 재료 |
| 제목 |
Formation of the Si embedded TiOx Nanopillars under the Inverted Barrier Morphology upon Wafer-Scale Al Anodization |
| 초록 |
Wafer-scale fabrication of uniform porous anodic alumina (PAA) films will be an efficient template for device integration of semiconductor nanowires which are vertically grown on the wafers. This approach requires the process technology of bottom electrode, i.e., for acting as a source or drain electrode, selectively connecting to the nanowires vertically grown inside pores. Here we show a superior characteristic of thin (≤100 nm) Ti layers as a bottom electrode prior to the Al deposition on the wafers, which enables the uniform within-wafer anodization without separation of Al film from the 4 to 8” silicon wafers owing to good conducting and adhesive properties of a Ti layer. The interesting feature we note is the Ti migration behavior into the pore bottom, which then inverts the curvature of barrier membrane as an alumina phase transforms into a Ti-rich oxide phase having a nanopillar form, and is also the detection of Si diffusion behavior into the nanopillars through the Ti interlayer upon Al anodization. High-resolution transmission electron microscopy (HRTEM) attached with an energy-dispersive x-ray analyzer reveals the formation mechanism of Ti-rich nanopillars which are connected to the bottom Ti electrode and confirms the existence of Si in the nanopillars and Ti interlayer on the Si substrate. |
| 저자 |
Sang-Won Jee1, Yang-Gyoo Jung2, Hong-Seok Seo1, Han-Don Um2, Jung-Ho Lee1
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| 소속 |
1Department of Fine Chemical Engineering, 2Hanyang Univ. |
| 키워드 |
Si embedded TiOx Nanopillars; Inverted Barrier Morphology; Porous Anodic Alumina (PAA); Ti interlayer; High-Resolution Transmission Electron Microscopy (HRTEM); Energy-Dispersive X-ray Analyzer
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| E-Mail |
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