| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Achieving Over 4% Efficiency for Next Generation SnS Thin Film Solar Cells |
| 초록 | Orthorhombic tin sulfide (SnS) is promising absorber material for thin-film solar cells (TFSCs) because it has an ideal optical band gap (~1.3 eV) and it comprises of relatively earth abundant constituents and non-toxicity. But till date, the cell efficiency has mostly remained below 4% which is fairly low compared to its theoretical limit of ~32%, because of low heterojunction quality with CdS buffer layer. This study reports the highest efficiency of 4.225% for vapor-transport-deposited (VTD) SnS absorber/CdS heterojunction solar cells with good long-term stability. These improved characteristics are primarily attributed to the reduction in interface defects of the SnS/CdS heterojunction, which can occur either during the deposition of transparent electrodes (Al-doped ZnO) or direct annealing of SnS/CdS heterojunction at 300 °C. The enhanced heterojunction interface quality is well supported by the substantially reduced reverse saturation current density and shunt conductance of the fabricated devices measured under dark conditions. Although the SnS/CdS device exhibits efficiency over 4%, significant short-circuit current loss mainly due to recombination was revealed by quantum efficiency and optical analysis. Admittance analysis shows the presence of numerous defect densities of Sn and S vacancies (＞1017 cm-3) in the VTD-grown SnS absorber. The detailed analysis of the device performance will be presented. |
| 저자 | Jae Yu Cho, Jaeyeong Heo |
| 소속 | Chonnam National Univ. |
| 키워드 | <P>Tinsulfide; Thin film solar cells; Heterojunction; Interface</P> |
