| 초록 |
Wafer backside metal process is a method for die attachment on the lead frame. It has good electrical, mechanical, and thermal properties. Au-based alloys are used for die attachment. Because Au is a high cost material, it should be replaced to reduce manufacturing cost of semiconductor packages. Sn-Ag alloy, one of various Sn-based alloys, is a candidate material due to low cost, superior wettability, bonding strength and fatigue strength. In this study, we used E-beam evaporator for deposition of Sn, Ag thin films on backside of Si wafer. Thickness and the structure of Sn-Ag backside metal layers were controlled to investigate the effect on the surface characteristics, these were investigated by SEM. |
