| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Aspect ratio enhancement of ZnO nanowires using silicon microcavity |
| 초록 |
A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and 107 per mm2, respectively, whereas the values are 20, 0.3 and 5x107 per mm2, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction. |
| 저자 |
J. P. Kar1, S. N. Das2, J. H. Choi3, Y. A. Lee1, T. Y. Lee2, J. M. Myoung3
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| 소속 |
1Information and Electronic Materials Research Laboratory, 2Department of Materials Science and Engineering, 3Yonsei Univ. |
| 키워드 |
ZnO; Nanowires; MOCVD; Etching
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| E-Mail |
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