| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Growth of β-Ga2O3 films on GaN/(0001) sapphire substrates and effects of oxygen plasma pre-exposure on structural properties of β-Ga2O3 films |
| 초록 |
Recently, β-Ga2O3 has attracted much attention due to its outstanding properties such as wide band gap Eg=4.9 eV, high transparency from visible to UV region and high break-down field. The β-Ga2O3 is a promising material for potential applications in power devices, transparent electronic devices, and deep ultraviolet photodetectors. Various techniques have been employed to grow β-Ga2O3 films such as chemical vapor deposition, pulsed laser deposition, plasma assisted molecular beam epitaxy (PAMBE). In this work, we report the growth and characterization of β-Ga2O3 films on GaN/(0001) sapphire substrates by MBE technique. The in-situ GaN layer was grown on c-plane sapphire substrate and then the grown GaN layer was oxidized with different time by exposing under oxygen plasma. After the oxidation β-Ga2O3 film was grown, in which the oxidized layer has a role as a nucleation layer for the growth of β-Ga2O3 film. The effects of oxygen plasma pre-exposure time of GaN layer on the structural properties of the β-Ga2O3 films were investigated. The growth processes were monitored by in-situ reflection high energy electron diffraction observation. The orientation and crystal quality of films were characterized by X-ray diffraction. The surface morphology and thickness of films were investigated by atomic force microscope and scanning electronic microscope. The (-201) oriented β-Ga2O3 film was grown on GaN/(0001) sapphire consist of six-fold symmetry. The in-plane orientation relationship was ＜010＞ β-Ga2O3 // ＜11-20＞GaN // ＜1100＞Al2O3 and ＜102＞β-Ga2O3 // ＜1-100＞GaN // ＜11-20＞Al2O3. The crystal quality of films reduced with the oxygen plasma pre-exposure time. The root mean square roughness increased with oxygen plasma pre-exposure time. |
| 저자 |
Trong Si Ngo1, Duc Duy Le2, Duy Khanh Tran1, Soon-Ku Hong2
|
| 소속 |
1Department of Advanced Materials Science and Engineering, 2Chungnam National Univ. |
| 키워드 |
β-Ga2O3; GaN; Plasma assisted molecular beam epitaxy <BR>
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| E-Mail |
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