| 초록 |
The ferroelectric field effect transistor (FeFET) is considered good candidate for the next generation, wearable memory because of the mechanically flexibility, solution process, low fabrication cost, high transparency. Here, We used the PVDF-TrFE and P3HT as the dielectric and active layer with micropatterned Cr/Au source and drain electrode patterned by photolithography. The transport in FeFET with various channel length, from 2um to 50um, was investigated systematically. Solution processing of ferroelectric and semiconducting layer have multilevel operation with more than 4 state. This 1T polymer memory also have high performance with low operation voltage of less than ±10V. It shows the reliable memory properties with retention and endurance cycle more than 10000 sec and 100 times, respectively. |
