| 초록 |
We elucidate how sublimation-doping of In2O3/ZnO heterojunction with various amidine-based organic dopants affects degree of band bending of the heterojunction and thus overall performances of solution-processed heterojunction oxide thin-film transistors. UPS and XPS analyses show that the stronger the basicity of the dopant, the smaller the EC–EF of ZnO that can be induced within a short doping time, resulting in a high electron mobility due to the increased electron density of the In2O3 layer at the vicinity of the heterointerface. Mott–Schottky analysis combined with SIMS show the preferential modification of EC–EF selectively for the ZnO layer. The use of the super base with the highest basicity exhibits a high electron mobility of 17.8 cm2V-1s-1 for SiO2 and 69.2 cm2V-1s-1 for ZrO2 dielectric layer and enhanced operational bias-stress stability via sublimation-doping for 6 min, which can be attributed to the trap-filled, percolation limited charge transport behavior. |
