| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Analysis on epitaxially grown AlInSb layers using MOCVD for AlInSb/InSb barrier infrared photodetectors |
| 초록 | InSb photodiodes have been widely used for mid wavelength infrared (MWIR) detectors. In order to obtain a high resolution image of the detectors, the reduction of dark current deteriorating the device performance has been intensively investigated. The use of AlInSb alloy as an electron blocking layer was suggested for the reduction of dark current [1]. However, compared to several reports on the molecular beam epitaxy growth of AlInSb layers [2], there have been few ones on the growth of them by metalorganic chemical vapor deposition (MOCVD) because of degraded surface morphologies and poor electrical properties due to severe impurity incorporation under low growth temperature. In this study, AlxIn1-xSb layers were grown on InSb (001) substrates by MOCVD. We were successful in obtaining high crystal quality Al0.10In0.90Sb layers with a mirror-like smooth surface, which was confirmed through XRD, AFM, and SEM measurements. FWHM of Al0.10In0.90Sb was 140 arcsec indicating high crystal quality of the Al0.10In0.90Sb layer. At higher Al composition, it was found that the surface morphology and crystal quality were degraded most likely due to an increase of Al-containing impurities such as Al-O and Al-C. In addition, the effect of the AlInSb electron blocking layer on the device performance was investigated by growing PBIN (p-InSb, Al0.10In0.90Sb barrier, i-InSb and n-InSb) and PIN (p-InSb, i-InSb and n-InSb) structures. I-V measurements showed that the PBIN structure of 400 × 400 μm2 size had a somewhat small dark current density of 9.4 × 10-8 A/cm2 even at 110 K under zero bias, which is much lower than 1.6 × 10-6 A/cm2 for the PIN structure. This result implies that AlInSb layer grown by MOCVD was effective to reduce the dark current. More experimental results and discussion will be given in the presentation. [1] J.R. Pedrazzani, S. Maimon, G.W. Wicks, Electron Letters 44, 25 (2008). [2] R. Loesch, R. Aidam, L. Kirste and A. Leuther, Journal of Applied Physics 109, 033706 (2011). |
| 저자 | 박환열1, 금대명1, 박용조2, 윤의준1 |
| 소속 | 1서울대, 2차세대융합기술(연) |
| 키워드 | AlInSb; InSb; MOCVD; photodetector; barrier |
