| 초록 |
The getter materials, a class of materials used in absorbing gases such as hydrogen and moisture in microelectronics or semiconductor devices, were usually synthesized by evaporating Ti, V, Zr materials in high vacuum and at high temperature, which makes the process expensive and complicated. The heat-induced activation (＞ 150 oC) also damages the adhesion properties in electronics. Therefore, there have been various studies on improving packaging methods, lowering activation temperature, and increasing the absorbing capacity by controlling the structures. In this study, we developed a device structure consisting of boehmite or gamma phase alumina film on porous anodized alumina on textured silicon wafer, which have cost efficiency in materials and processing aspects. The alumina film with hexagonally arranged nanopores was fabricated by well-developed anodizing process and the surface modified to enhance the adsorption/desorption property by calcination or immersion in boiling water. The structures were characterized by FE-SEM, XRD, and hydrogen/moisture sorption capacity was obtained by analyzing isothermal adsorption/desorption curve. They can be applied to a high-efficiency absorber as high reactivity to water and its peculiar porous structure. |
