| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | 10. 원자층 증착법의 최근 연구 동향(Recent Progress of Atomic Layer Deposition) |
| 제목 | Vertically Selective Pt Deposition on 3D Nanostructures by Ion-Implantation and Atomic Layer Deposition |
| 초록 | Recently, as the Si-based technology node nears ~10 nm and approaches its physical limit, alternative methodologies are required for further extension of Moore’s law, with current strategies focusing on the implementation of integration-feasible structures such as 3D FinFETs and nanowires (NWs) in place of the conventional planar MOSFET. In accordance with these structural challenges, extremely small feature patterning is required to satisfy the increasing process complexity of modern electronic devices beyond the sub-10 nm technology regime. In conventional device fabrication, patterning has been achieved by a top-down process based largely on photolithography and subsequent etching, but these critical processing steps are facing fundamental limits for device downscaling. Of several paths being explored for novel nanopatterning, area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface poisoning layer. Using ion implantation of fluorocarbons (CFx), the hydrophobic surface poisoning layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. On the basis of first-principles density-functional calculations, additionally, we can suggest reaction pathways from total energy diagram. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation. |
| 저자 | 김우희1, Stacey F. Bent2 |
| 소속 | 1전북대, 2Stanford Univ. |
| 키워드 | area-selective deposition; atomic layer deposition; ion implantation; 3D nanostructure; geometric selectivity |
