| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Growth of Epitaxial ZnSnN2 Films on Al2O3 Substrate |
| 초록 | Having the several merits as abundant, environmental friendly, non-toxic, inexpensive elements; Zn-IV-N2 semiconductors (IV refers to Si, Ge or Sn) have attracted a lot of attention in research, recently. The investigation on ZnSiN2, ZnGeN2 have been reported long ago but the study on ZnSnN2 is still at the beginning stage. In the aspects of commercial application, device fabrication and basic property study, the growth of high quality single crystal ZnSnN2 is crucial. However, the growing of single crystal ZnSnN2 films in large scale and affordable price is not easy. In this study, novel growth of ZnSnN2 films on Al2O3 substrates is performed by plasma-assisted molecular-beam epitaxy on ZnO buffer. The growth evolution was real-time monitored by in situ reflection high energy electron diffraction. High-resolution X-ray diffraction measurements were performed utilizing a Bruker AXS D8DISCOVER diffractometer. Surface morphology and root-mean-square roughness of the samples were obtained with atomic force microscope Asylum Research MFP-3D in tapping mode. In order to investigate the detail microstructure, we performed cross-sectional transmission electron microscope observation by using an atomic resolution TEM (JEOL JEM-ARM200F). The optical bandgaps and the carrier concentrations and carrier mobility of ZnSnN2 films were investigated and compared. |
| 저자 | Duc Duy Le1, Soon-Ku Hong2, Trong Si Ngo1, Jeongkuk Lee2 |
| 소속 | 1Department of Materials Science Engineering, 2Chungnam National Univ. |
| 키워드 | MBE; thin film; single crystal; ZnSnN<SUB>2</SUB>; sapphire. |
