| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Growth of single crystal ZnSnN2 films on a single crystal ZnO Buffer Layer |
| 초록 | Due to the several merits of abundant, environmental friendly, non-toxic, inexpensive elements, Zn-IV-N2 semiconductors (IV refers to Si, Ge or Sn) are hoped to be the alternative materials for III-nitride materials. There are several reports on the synthesis and characterization of both ZnSiN2, ZnGeN2, but the study on ZnSnN2 is new because of the first paper on its synthesis was four years ago. For commercial application, device fabrication and basic property study, the growth of high quality single crystal ZnSnN2 is crucial. However, only films grown on (111) YSZ and (001) LiGaO2 substrates are single crystal. The commercial (111) YSZ and (001) LiGaO2 substrates are also available in small size and expensive which makes the approach to single crystal ZnSnN2 films is not easy. In this study, single crystal ZnSnN2 films were grown on sapphire substrate using a ZnO buffer layer. All the grown ZnSnN2 films exhibited single pseudowurtzite structure. The epitaxy relationship is determined that [112 ̅0] and [11 ̅00] azimuths of the ZnSnN2 films align with [112 ̅0] and [11 ̅00] azimuths of ZnO layer, respectively. The growth evolution was real-time monitored by in situ reflection high energy electron diffraction (RHEED). High-resolution X-ray diffraction (XRD) measurements were performed utilizing a Bruker AXS D8 DISCOVER diffractometer. Surface morphology and root-mean-square (RMS) roughness of the samples were obtained with atomic force microscope (AFM) Asylum Research MFP-3D in tapping mode. In order to investigate the detail microstructure, we performed cross-sectional transmission electron microscope (TEM) observation by using an atomic resolution TEM (JEOL JEM-ARM200F). |
| 저자 | Duc Duy Le1, Trong Si Ngo2, Jeong-kuk Lee1, Soon-Ku Hong2 |
| 소속 | 1Department of Materials Science and Engineering, 2Chungnam National Univ. |
| 키워드 | <P>ZnSnN<SUB>2</SUB>; ZnO; single crystal; epitaxy; MBE</P> |
