| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Effects of varied Sulfur concentration on Cu2SnS3 thin films solar cell deposited by stacked metal precursors |
| 초록 |
Due to development in the photovoltaic industry, research has been focused on improving eco-friendly, low-cost and high-efficiency thin film solar cells. To achieve this aim, the ternary Cu2SnS3 (CTS) semiconductors compound is a promising material to fabricate thin film solar cell. This study aims to evaluate the effect of varied sulfur concentration on the quality of CTS thin films. The CTS thin films were synthesized by DC magnetron sputtering and annealed in the stacked order of Cu/Sn/S at 580℃ in RTA (rapid thermal processing) in an Ar atmosphere. The formation mechanism of CTS thin films have been analyzed using Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, X-ray diffraction (XRD) and X-ray Fluorescence (XRF). |
| 저자 |
Mingrui He1, A.C. Lokhande2, In Young Kim3, Jin Hyeok Kim4
|
| 소속 |
1Optoelectronics Convergence Research Center, 2Department of material Science and Engineering, 3ChonnamNational Univ., 4300 Yongbong-Dong |
| 키워드 |
Cu2SnS3; thin film; solar cell; sulfurization; XRD; XRF
|
| E-Mail |
|
