| 학회 | 한국재료학회 |
| 학술대회 | 2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 | 19권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | The Improvement of Photovoltaic Properties using Cesium Iodide Interlayer in Solar Cells |
| 초록 | Hydrogenated amorphous silicon thin film solar cells (a-Si:H TFSCs) have been widely studied for enhancing the cell efficiency. Generally, as it consists of several thin films such as transparent conductive oxide (TCO), p-i-n type a-Si:H alloys, and metal, there are some interfaces in the a-Si:H SCs. The interface in the solar cells is crucial for series resistance because of the difference in each other electric properties. In case of back electrode, there is potential barrier from schottky junction between n-type a-Si:H (n-Si) and Al thin films due to the work function difference so that it disrupts the electron migration. For improve at drawback at the n-Si/Al anode interface, thin interlayer have been alternatively studied such as cesium carbonate (Cs2CO3), lithium fluoride (LiF), cesium fluoride (CsF), or cesium iodide (CsI). These thin films can be incorporated at the n-Si/Al interface so that it is expected to reduce shunt leakage, as well as series resistance. Especially, CsI is a material of great interest owing to its high quantum efficiency and it has the high work function (6.1 eV). In this study, CsI is applied to a-Si:H SCs as interlayer for the n-Si/Al interface and investigated the influence of CsI 0~5nm thickness on the photovoltaic performance. CsI thin films are deposited by thermal evaporator depending on 0, 1, 3, 5nm thickness. As a result, the solar cells with CsI interlayer show the higher cell efficiency than the reference cells. Particularly, cell efficiency was enhanced from 7.98% for the reference cell without CsI interlayer to 8.53% for the cell with 3nm CsI layer. It is observed that the cell efficiency with CsI interlayer gradually increase in the thickness of 0~3nm and slightly decrease in the higher thickness than 3nm. It is suggested that fill factor (FF) and short circuit current (Jsc) affect to the cell efficiency as open circuit voltage (Voc) is almost constant. |
| 저자 | Young-Joo Lee, Ah Ra Kim, Myung-Kwan Song, Chang-Su Kim, Sung-Gyu Park, Jung-Dae Kwon, Yongsoo Jeong, Dong-Ho Kim |
| 소속 | 한국기계(연) |
| 키워드 | amorphous silicon; thin film solar cells; cesium iodide |
