| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Effect of Annealing Temperature on Nonvolatile Characteristics of CBRAM Cell embedded with CuO |
| 초록 | A Conductive bridge random-access-memory (CBRAM) has been considered as a next-generation non-volatile memory because current NAND flash memory has been facing with physical limitation on scale down. And CBRAM cell embedded with CuO showed superior non-volatile characteristics. We investigated the effect of annealing temperature on nonvolatile characteristics of CBRAM cell embedded CuO by varying an annealing temperature. Through the analysis of I-V characteristics of CBRAM annealed with various temperatures, we found out the relationship an annealing temperature with CBRAM electrical behavior. It was observed that HRS current level of CBRAM cell embedded with CuO decreased with increasing an annealing temperature. In addition, it was confirmed that the set / reset voltage were affected by varying a temperature. In particular, CBRAM annealed at 450 °C showed retention time, memory margin and endurance higher than 105,103,5x102, respectively. In conclusion, we found the annealing temperature strongly affected the bridge formation for CBRAM and influence on non-volatile memory characteristics. *This work was financially supported by the Industrial Strategic Technology Development Program(10039191, The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Brain Korea 21 Plus Program in 2013, Republic of Korea. |
| 저자 | Young-Hye Son1, Hyun-Min Seung2, Kyoung-Cheol Kwon1, Jong-Sun Lee2, Myung-Jin Song3, Han-Vit Jeoung2, Ki-Hyun Kwon1, Jea-Gun Park2 |
| 소속 | 1Department of Electronics and Computer Engineering, 2Hanyang Univ., 3Department of Nanoscale Semiconductor |
| 키워드 | CBRAM; CuO; Nonvolatile Memory |
