| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Soluble Semiconducting and Gate Dielectric Materials for Thin-Film Transistors via Self-Combustion Reaction |
| 초록 |
Indium zinc oxide (IZO) thin films were fabricated via self-combustion of In and Zn salts coordinated with fuel and oxidizer ligands. The heat generated from the exothermic reaction allows the formation of oxide film at lower temperature. IZO thin-film transistors (TFTs), obtained from this combustive In–Zn pair at a low annealing temperature of 350 °C, showed a significantly enhanced field-effect mobility of 13.8 cm2 V-1 s-1 and a high on/off current ratio of 1.06 x 108. Inkjet printing of the combustive precursors yielded TFTs with a high field-effect mobility of 5.3 cm2 V-1 s-1 and an on/off ratio of 106. In addition, we report the fabrication of high-performance metal oxide TFTs with AlOx gate dielectrics using combustion. Our self-combustion system utilizing two Al precursors as a fuel and oxidizer is systematically compared with conventional combustive Al precursors with urea in terms of combustion efficiency and dielectric properties. |
| 저자 |
조성윤, 강영훈, 이창진
|
| 소속 |
한국화학(연) |
| 키워드 |
TFT; Solution Process; Self-Combustion
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| E-Mail |
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