| 학회 | 한국공업화학회 |
| 학술대회 | 2017년 가을 (11/08 ~ 11/10, 부산 벡스코(BEXCO)) |
| 권호 | 21권 2호 |
| 발표분야 | 무기재료_포스터 |
| 제목 | Transition metal dichalcogenide and graphene oxide composites for hole injection layer in organic light emitting diode |
| 초록 | The efficiency of the organic light emitting diode (OLED) can be remarkably improved by introducing a hole injection layer between the anode and the active layer. Typical examples of transition metal dichalcogenides (TMDs) are MoS2, WS2 and TaS2. Applying TMD can increase efficiency, but it will also improve efficiency by applying graphite oxide (GO) together. TMD nanosheets are manufactured by the exfoliation method using ultrasonication and GO is synthesized by the Hummers method. The size of GO is around 400 nm to several micrometers. The large sized GO can completely cover the surface of the ITO film to reduce the roughness. In this study, the possibility of TMD-GO composites for hole injection layer in OLEDs will be shown. ACKNOWLEDGEMENTS This work was supported in part by NRF grants (2015K1A3A1A59073839 and 2017H1D8A1030599) and in part by Korea Agency for Infrastructure Technology Advancement grant funded by Ministry of Land, Infrastructure and Transport (17IFIP-B133622-01). |
| 저자 | 배사랑, 김수영 |
| 소속 | 중앙대 |
| 키워드 | TMDs; OLED; GO |
