| 초록 |
Here, we study the effect of germanium (Ge) doping on crystal growth and device properties of Cu2ZnSn(S, Se)4 (CZTSSe) thin film solar cells (TFSCs). CZTSSe thin films were fabricated from stacked layers of Zn, Sn and Cu metal targets on Mo-coated soda lime glass (SLG) substrates using direct-current (DC) magnetron sputtering method followed by post sulfo-selenization/annealing process. It was observed that the Ge-doping improves the grain growth, compactness, morphology, and crystallinity of the CZTSSe absorber layer resulting in improved solar cell device performance from 7.0% to over 10.0%. These results suggest the possibility to achieve a further improvement in the optoelectronic properties and solar cells performance by optimization of processes with a fine-tuning of the Ge doping in the CZTSSe absorber material |
