| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Improved device performance of Ge doped CZTSSe solar cell over 10% conversion efficiency |
| 초록 |
Effect of germanium (Ge) doping on crystal growth and device properties of CZTSSe thin-film solar cells were investigated. CZTSSe thin films were prepared by stacked layers from Zn, Sn and Cu metal targets using sputtering followed by post sulfo-selenization process. It was observed that the doping of Ge improves the grain growth, compactness, and crystallinity of the CZTSSe absorber layer results enhanced solar cell device performance from 7.28 to 10.09%. These results suggest the possibility to achieve a further improvement in the optoelectronic characteristics of the solar cells that could be accomplished by optimization of processes with a fine-tuning of the Ge doping in the CZTSSe absorber material. |
| 저자 |
Kuldeep Singh Gour1, Jin Hyeok Kim2
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| 소속 |
1Department of Materials Science and Engineering, 2Chonnam National Univ. |
| 키워드 |
CZTSSe; Ge doping; Solar Cell; Sputtering
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| E-Mail |
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