| 학회 |
한국고분자학회 |
| 학술대회 |
2020년 가을 (10/05 ~ 10/08, 부산컨벤션센터(BEXCO)) |
| 권호 |
45권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Fluorinated Organic-Inorganic Hybrid Polymer Gate Dielectrics for High Performance Metal Oxide Thin-Film Transistors |
| 초록 |
Fluorinated organic-inorganic hybrid polymer (FAGPTi) was introduced as a gate dielectric layer in In-Ga-Zn-O (IGZO) thin film transistors (TFTs). FAGPTi film showed improved insulating properties after thermal annealing process. After the optimized post treatment process, the IGZO TFTs with FAGPTi gate dielectric exhibited excellent electrical performance with mobility of 3 cm2 V-1 s-1 and operational stability against external gate bias stress. |
| 저자 |
이일금1, 엽하경2, 김나혜3, 김주영3, 김세현2, 남수지1
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| 소속 |
1한국전자통신(연), 2영남대, 3강원대 |
| 키워드 |
Oxide Thin-film transistor; Organic-inorganic hybrid polymer
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| E-Mail |
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