| 초록 |
There great interests in gallium oxide for the applications in high power devices, solar-blind photodetectors, and gas sensors. A large bandgap energy of 4.9 eV allows high critical electric field of 8 MV cm−1, leading to making its devices more efficient with small size dimensions for high power device and harsh environmental sensor. The wide bandgap nature also enables Ga2O3–based electronic devices to operate at high temperatures due to its low intrinsic carrier concentration. Furthermore, Ga2O3 has shown excellent catalytic reactions with various chemicals and gases including hydrogen. In this study, we investigated the hydrogen sensing characteristics of Pt Schottky diodes on (-201) and (010) β-Ga2O3 bulk crystals. The maximum relative current change of the (-201) Ga2O3 diode sensor was as high as 7.86X107% at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. |
