| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | C. 에너지 재료 |
| 제목 | Growth and characterization of crystalline Ga2O3(ZnO)x thin films |
| 초록 | ZnO-related materials have been used in many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Nowadays, ZnO-related materials are very promising candidates in thermoelectric field due to their stability at high temperature. Similar to the electrical doping of ZnO with Al and In, Ga-doping has been widely applied to enhance the electrical conductivity of ZnO. The high electrical conductivity of the Ga doped ZnO makes it become a promising material for high temperature thermoelectric application. In addition, very low thermal conductivity of highly Ga doped ZnO materials can be expected due to the Zn(Ga,)-O/Ga-O interfacial phonon scattering, which is also a key factor in achieving high thermoelectric performance. In this work, we report the growth and characterization of crystalline Ga2O3(ZnO)x epilayers on single crystal sapphire (0001) substrate by plasma-assisted molecular beam epitaxy. The effects of Ga-Zn source flux ratio to the structural of grown films were investigated. The morphology and crystal structural of the films were characterized by reflection high-energy diffraction (RHEED), atomic force microscopy and high-resolution x-ray diffraction. In-situ RHEED observations showed that other crystal structure appeared beside the common ZnO-based structure in these films grown with high Ga-Zn ratio condition. |
| 저자 | Duc Duy Le1, Trong Si Ngo2, Soon-Ku Hong1 |
| 소속 | 1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 | epitaxial film; c-plane sapphire; PAMBE; oxide thin film. |
