| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | E. Structural Materials and processing Technology(구조재료 및 공정기술) |
| 제목 | Fabrication and Property Evaluation of Ti target for Sputtering by Spark Plasma Sintering |
| 초록 | Titanium and its alloys are light and it can be maintained specific strength from a low to intermediate temperature, mechanical properties like that fatigue strength and fracture toughness are excellent and the applications are fairly wide because of good corrosion resistance for chemicals and seawater. Sputtering target is used to fabricate the thin-film applied to semiconductor by sputtering equipment(SRN-120). The thin-film characteristics depend on sputtering target properties. Target properties like that purity, grain size and density determine film properties such as film purity, thickness uniformity, surface roughness, defective microstructures and density. Because of such reasons, sputtering target of raw material is the most important. In particular it is mainly using formation of Ohmic contact (TiSix) and Ohmic contact layer at the semiconductors part of Information Technology industry and also it has using electrode materials of upper and lower at the energy part of Environment Technology. In spite of imports of high-purity titanium sputtering target are about 1,600 million dollar, the core technology is not exist in domestic. So, development of core technology is necessary as soon as possible. Purity of Titanium for sputtering target is required up to 4N5(99.995%) because of the following reasons; oxygen that the typical impurities of titanium is increased brittle of thin-film and electric resistance and U, Th are reduced reliability of products due to generation of α-ray. Generally, Ti sputtering target is fabricated by melting/casting method. But in this study, it is made by spark plasma sintering that powder metallurgy method. Spark Plasma Sintering(SPS) of the new sintering method has advantages that can be fabricated sintered-body having high purity and high density without grain growth through the fast heating rate and one-step process. So, SPS method is proper for fabrication of sputtering target. Therefore, Ti sintered-body for sputtering target having high-density and high-purity is fabricated by spark plasma sintering. And it can be fabricated Ti sputtering target controlled parameters like that sintering temperature, heating rate and pressure to set up the optimized process conditions. It has diameter of Φ150x6.35mm. Also, density, purity, phase transformation and microstructure of sintered-body are analyzed by Archimedes, Inductively Coupled Plasma(ICP), X-ray diffraction and Field-Emission Scanning Electron Microscope(FE-SEM). Density and grain size are up to 99% and about 35㎛, respectively |
| 저자 | 이승민1, 박현국1, 윤희준1, 양준모2, 우기도3, 오익현1 |
| 소속 | 1한국생산기술(연), 2나노종합팹센터, 3전북대 |
| 키워드 | Spark Plasma Sintering(SPS); Sputtering target; Ti; high-density; high-purity |
