| 학회 |
한국재료학회 |
| 학술대회 |
2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 |
21권 1호 |
| 발표분야 |
A. 전자/반도체 재료 |
| 제목 |
Growth Behavior of GaN on Patterned Sapphire Substrate Using Sputtered AlN Buffer layer |
| 초록 |
Aluminum nitride (AlN) buffer layers were grown on patterned sapphire substrate (PSS) by reactive radio frequency (RF) sputtering in different conditions (power, gas ratio, and pressure) with the same thickness (~ 25nm). Then, gallium nitride (GaN) grew on these AlN buffer layers using epitaxial lateral overgrowth (ELOG) method by metal organic chemical vapor deposition (MOCVD). Morphologies of the samples were characterized using a field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM). The differences in the GaN growth behavior and on each AlN buffer layer affect the crystallinity of the GaN epitaxial layer. These results were obtained from high resolution x-ray diffraction (HR-XRD) and panchromatic (300 to 800 nm) cathodoluminescence (CL), and the dislocation densities were estimated using full with half maximum (FWHM) values. From this research, the adequate crystallinity of AlN requires to make high quality GaN epitaxial layer on PSS is investigated. |
| 저자 |
정우섭, 김대식, 배선호, 정서주, 이지은, 박준성, 조승희, 변동진
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| 소속 |
고려대 |
| 키워드 |
AlN; GaN; PSS; Buffer layer; Sputtering; MOCVD; Epitaxial growth
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| E-Mail |
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